イケダ アキヒロ   Ikeda Akihiro
  池田 晃裕
   所属   崇城大学  情報学部 情報学科
   崇城大学大学院  工学研究科 応用情報学専攻(博士前期課程)
   崇城大学大学院  工学研究科 応用情報学専攻(博士後期課程)
   職種   教授
発表年月日 2021/12/14
発表テーマ Evaluation of Temperature at SiC Surface During Pulsed Excimer Laser Irradiation
会議名 9th International Japan-Africa Conference on Electronics, Communications, and Computations (JAC-ECC)
学会区分 国際学会
発表形式 口頭(一般)
単独共同区分 共同
発表者・共同発表者 Shogo Mutoh, Akihiro Ikeda, Hiroshi Ikenoue, Tanemasa Asano
概要 While high-energy and high-power lasers such as the excimer laser have high potential to provide benefits over conventional thermal processing for power devices made of wide bandgap semiconductors such as 4H-SiC, one of challenges remained is measurement of temperature of materials during processing. In this work, use of the two-color method is investigated to measure time evolution of temperature at the 4H-SiC surface during KrF excimer laser irradiation. It is shown that the surface temperature reaches about 3000 K within a few tens of nanoseconds, which reasonably agrees with thermal simulation. Diffusion of aluminum atoms induced by the laser irradiation is also investigated. Results suggest that diffusion coefficient can be extremely larger than extrapolated from values obtained by the conventional furnace annealing.