Faculty Information - Ikeda Akihiro

Ikeda Akihiro

Department / Course FACULTY OF COMPUTER AND INFORMATIONSCIENCES Department of Computer and Information Sciences

Job

Book and thesis
1.	2026/05	Papers	Deep Al doping in 4H-SiC by pulse-width-modulated CO2 laser irradiation of Al2O3 films without post-annealing Materials Science in Semiconductor Processing 212,pp.110755-1-110755-7 (Sole-authored)
2.	2025/08	Papers	Electroless Cu plating on poly(ethylene 2,6-naphthalate) with plasma surface modification and its application to high-frequency flexible printed circuits Journal of Applied Physics 138,pp.055303-1-055303-6 (Sole-authored)
3.	2025/08	Papers	Relation between film transmittance and deposition conditions by pulsed laser deposition using powder targets International Journal of Recent Development in Engineering and Technology 14,pp.42-47 (Co-authored)
4.	2019/07	Papers	Increasing Laser-Doping Depth of Al in 4H-SiC by Using Expanded-Pulse Excimer Laser Materials Science Forum 963,pp.412-415 (Co-authored)
5.	2019/07	Papers	High-Concentration, Low-Temperature, and Low-Cost Excimer Laser Doping for 4H-SiC Power Device Fabrication Materials Science Forum 963,pp.403-406 (Co-authored)
6.	2019/06	Papers	Formation of low resistance contacts to p-type 4H-SiC using laser doping with an Al thin-film dopant source JAPANESE JOURNAL OF APPLIED PHYSICS 58 (Co-authored)
7.	2018/04	Papers	Evaluation of effective length of the enhanced oxidation of active oxygen produced using SrTixMg1-xO3-delta catalyst for low-temperature oxidation JAPANESE JOURNAL OF APPLIED PHYSICS 57 (4) (Co-authored)
8.	2018	Papers	Room-temperature Hermetic Packaging Using Ultrasonic Cu-Cu Bonding with Compliant Rim SENSORS AND MATERIALS 30 (12),pp.2897-2903 (Co-authored)
9.	2017/11	Papers	Increased doping depth of Al in wet-chemical laser doping of 4H-SiC by expanding laser pulse MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 70,pp.193-196 (Co-authored)
10.	2017/05	Papers	Enhanced Low-Temperature Oxidation of 4H-SiC Using SrTi1-xMgxO3-δ Materials Science Forum 897,pp.356-359 (Co-authored)
11.	2016/06	Papers	Enhanced oxidation of Si using low-temperature oxidation catalyst SrTi1− x Mg x O3−δ Jpn. J. Appl. Phys. 55,pp.06GJ05-1-06GJ05-5 (Co-authored)
12.	2016	Papers	Low temperature oxidation of 4H-SiC using oxidation catalyst Sr Ti1-x Mgx O3-δ Jpn. J. Appl. Phys., 55,pp.108001-1-108001-3 (Co-authored)
13.	2016	Papers	Al Doping from Laser Irradiated Al Film Deposited on 4H-SiC Materials Science Forum 858,pp.527-530 (Co-authored)
14.	2015/01	Papers	Nitrogen doping of 4H-SiC by KrF excimer laser irradiation in liquid nitrogen Jpn. J. Appl. Phys. 54 (4) (Co-authored)
15.	2014/05	Papers	Aluminum doping of 4H-SiC by irradiation of excimer laser in aluminum chloride solution Jpn. J. Appl. Phys. 53 (6) (Co-authored)
16.	2013/06	Papers	Phosphorus Doping into 4H-SiC by Irradiation of Excimer Laser in Phosphoric Solution Jpn J Appl Phys 52 (6),pp.06GF02-06GF02-4 (Co-authored)
17.	2013	Papers	Development of a Portable Taste Sensor with a Lipid/Polymer Membrane, Sensors 13,pp.1076-1084 (Co-authored)
18.	2013	Papers	Development of New Oxygen Sensor by Microfabrication of Single-Crystal CuFeTe2 Thin Films Sensors and Materials 25,pp.471-477 (Co-authored)
19.	2013	Papers	Effect of Coating Self-Assembled Monolayer on Room-Temperature Bonding of Cu Micro-Interconnects Jpn. J. Appl. Phys., 52,pp.068004-1-068004-3 (Co-authored)
20.	2013	Papers	Phosphorus doping of 4H SiC by liquid immersion excimer laser irradiation Applied Physics Letters 102,pp.052104-1-052104-4 (Co-authored)
21.	2013	Papers	Room-Temperature Cu Microjoining with Ultrasonic Bonding of Cone-Shaped Bump Jpn. J. Appl. Phys., 52,pp.04CB10-1-04CB10-5 (Co-authored)
22.	2012	Papers	Room-Temperature Microjoining of LSI Chips on Poly(ethylene naphthalate) Film Using Mechanical Caulking of Au Cone Bump Jpn. J. Appl. Phys. 51,pp.04DB04-1-04DB04-4 (Co-authored)
23.	2011	Papers	Development and Evaluation of a Miniaturized Taste Sensor Chip Sensors 11,pp.9878-9886 (Co-authored)
24.	2011	Papers	Microjoining of LSI Chips on Poly(ethylene naphthalate) Using Compliant Bump Jpn. J. Appl. Phys. 50,pp.06GM05-1-06GM05-4 (Co-authored)
25.	2010	Papers	Effect of Argon/Hydrogen Plasma Cleaning on Electroless Ni Deposition on Small-Area Al Pads Jpn. J. Appl. Phys. 49,pp.08JA05-1-08JA05-4 (Co-authored)
26.	2009	Papers	Electroless Ni-B plating on SiO2 with 3-aminopropyl- triethoxysilane as a barrier layer against Cu diffusion for through-Si via interconnections in a 3-dimensional multi-chip package Thin Solid Films 517,pp.1740-1745 (Co-authored)
27.	2007	Papers	Uniformity of an Electroless Plated Ni on a Pad Connected to Different Size Pads or a Pn Junction for Under Bump Metallurgy in a Flip-Chip Assembly IEEE Trans . Comp. Packag. Technol. 30,pp.494-499 (Co-authored)
28.	2003	Papers	Trap assisted leakage current conduction in thin silicon oxynitride films grown by rapid thermal oxidation combined microwave excited plasma nitridation Microelectronic Engineering 65,pp.357-370 (Co-authored)
29.	2003	Papers	Effects of post annealing on removal of defect states in silicon oxynitride films grown by oxidation of silicon substrates nitrided in inductively coupled nitrogen plasma Thin Solid Films 423,pp.212-217 (Co-authored)
30.	2001	Papers	Oxynitridation of silicon with nitrogen plasma for flash memory applications characterized by high frequency capacitance- voltage measurements Thin Solid Films 385,pp.215-219 (Co-authored)
31.	2001	Papers	Inductively coupled plasma application to the resist ashing Thin Solid Films 386,pp.160-164 (Co-authored)
32.	2001	Papers	Effect of nitrogen plasma conditions on electrical properties of silicon oxynitrided thin films for flash memory applications Thin Solid Films 386,pp.111-116 (Co-authored)
33.	1999	Papers	Electronic Properties of MOS Capacitor Exposed to Inductively Coupled Hydrogen Plasma Thin Solid Films 345,pp.172-177 (Co-authored)