教員情報 - 池田　晃裕

イケダ　アキヒロ Ikeda Akihiro
池田　晃裕

所属情報学部情報学科

職種教授

著書・論文歴
1.	2019/07	論文	Increasing Laser-Doping Depth of Al in 4H-SiC by Using Expanded-Pulse Excimer Laser Materials Science Forum 963,412-415頁 (共著)
2.	2019/07	論文	High-Concentration, Low-Temperature, and Low-Cost Excimer Laser Doping for 4H-SiC Power Device Fabrication Materials Science Forum 963,403-406頁 (共著)
3.	2019/06	論文	Formation of low resistance contacts to p-type 4H-SiC using laser doping with an Al thin-film dopant source JAPANESE JOURNAL OF APPLIED PHYSICS 58 (共著)
4.	2018/04	論文	Evaluation of effective length of the enhanced oxidation of active oxygen produced using SrTixMg1-xO3-delta catalyst for low-temperature oxidation JAPANESE JOURNAL OF APPLIED PHYSICS 57 (4) (共著)
5.	2018	論文	Room-temperature Hermetic Packaging Using Ultrasonic Cu-Cu Bonding with Compliant Rim SENSORS AND MATERIALS 30 (12),2897-2903頁 (共著)
6.	2017/11	論文	Increased doping depth of Al in wet-chemical laser doping of 4H-SiC by expanding laser pulse MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 70,193-196頁 (共著)
7.	2017/05	論文	Enhanced Low-Temperature Oxidation of 4H-SiC Using SrTi1-xMgxO3-δ Materials Science Forum 897,356-359頁 (共著)
8.	2016/06	論文	Enhanced oxidation of Si using low-temperature oxidation catalyst SrTi1− x Mg x O3−δ Jpn. J. Appl. Phys. 55,06GJ05-1-06GJ05-5頁 (共著)
9.	2016/02	論文	Al doping of 4H-SiC by laser irradiation to coated Al film and its application to junction barrier Schottky diode Jpn. J. Appl. Phys. 55 (4) (共著)
10.	2016	論文	Low temperature oxidation of 4H-SiC using oxidation catalyst Sr Ti1-x Mgx O3-δ Jpn. J. Appl. Phys., 55,108001-1-108001-3頁 (共著)
11.	2016	論文	Al Doping from Laser Irradiated Al Film Deposited on 4H-SiC Materials Science Forum 858,527-530頁 (共著)
12.	2015/01	論文	Nitrogen doping of 4H-SiC by KrF excimer laser irradiation in liquid nitrogen Jpn. J. Appl. Phys. 54 (4) (共著)
13.	2014/05	論文	Aluminum doping of 4H-SiC by irradiation of excimer laser in aluminum chloride solution Jpn. J. Appl. Phys. 53 (6) (共著)
14.	2013/06	論文	Phosphorus Doping into 4H-SiC by Irradiation of Excimer Laser in Phosphoric Solution Jpn J Appl Phys 52 (6),06GF02-06GF02-4頁 (共著)
15.	2013	論文	Development of a Portable Taste Sensor with a Lipid/Polymer Membrane, Sensors 13,1076-1084頁 (共著)
16.	2013	論文	Development of New Oxygen Sensor by Microfabrication of Single-Crystal CuFeTe2 Thin Films Sensors and Materials 25,471-477頁 (共著)
17.	2013	論文	Effect of Coating Self-Assembled Monolayer on Room-Temperature Bonding of Cu Micro-Interconnects Jpn. J. Appl. Phys., 52,068004-1-068004-3頁 (共著)
18.	2013	論文	Phosphorus doping of 4H SiC by liquid immersion excimer laser irradiation Applied Physics Letters 102,052104-1-052104-4頁 (共著)
19.	2013	論文	Room-Temperature Cu Microjoining with Ultrasonic Bonding of Cone-Shaped Bump Jpn. J. Appl. Phys., 52,04CB10-1-04CB10-5頁 (共著)
20.	2012	論文	自己組織化単分子膜を用いた銅とはんだのフラックスレス接合の研究電子情報通信学会誌C J95-C,304-311頁 (共著)
21.	2012	論文	Room-Temperature Microjoining of LSI Chips on Poly(ethylene naphthalate) Film Using Mechanical Caulking of Au Cone Bump Jpn. J. Appl. Phys. 51,04DB04-1-04DB04-4頁 (共著)
22.	2011	論文	Development and Evaluation of a Miniaturized Taste Sensor Chip Sensors 11,9878-9886頁 (共著)
23.	2011	論文	Microjoining of LSI Chips on Poly(ethylene naphthalate) Using Compliant Bump Jpn. J. Appl. Phys. 50,06GM05-1-06GM05-4頁 (共著)
24.	2010	論文	Effect of Argon/Hydrogen Plasma Cleaning on Electroless Ni Deposition on Small-Area Al Pads Jpn. J. Appl. Phys. 49,08JA05-1-08JA05-4頁 (共著)
25.	2009	論文	Electroless Ni-B plating on SiO2 with 3-aminopropyl- triethoxysilane as a barrier layer against Cu diffusion for through-Si via interconnections in a 3-dimensional multi-chip package Thin Solid Films 517,1740-1745頁 (共著)
26.	2007	論文	Uniformity of an Electroless Plated Ni on a Pad Connected to Different Size Pads or a Pn Junction for Under Bump Metallurgy in a Flip-Chip Assembly IEEE Trans . Comp. Packag. Technol. 30,494-499頁 (共著)
27.	2005	論文	チップスタック型マルチチップ実装におけるMOSFETの移動度の変動について電子情報通信学会誌C J88-C,866-873頁 (共著)
28.	2003	論文	Trap assisted leakage current conduction in thin silicon oxynitride films grown by rapid thermal oxidation combined microwave excited plasma nitridation Microelectronic Engineering 65,357-370頁 (共著)
29.	2003	論文	Effects of post annealing on removal of defect states in silicon oxynitride films grown by oxidation of silicon substrates nitrided in inductively coupled nitrogen plasma Thin Solid Films 423,212-217頁 (共著)
30.	2001	論文	Oxynitridation of silicon with nitrogen plasma for flash memory applications characterized by high frequency capacitance- voltage measurements Thin Solid Films 385,215-219頁 (共著)
31.	2001	論文	Inductively coupled plasma application to the resist ashing Thin Solid Films 386,160-164頁 (共著)
32.	2001	論文	Effect of nitrogen plasma conditions on electrical properties of silicon oxynitrided thin films for flash memory applications Thin Solid Films 386,111-116頁 (共著)
33.	1999	論文	Electronic Properties of MOS Capacitor Exposed to Inductively Coupled Hydrogen Plasma Thin Solid Films 345,172-177頁 (共著)